Annealing Group III-V compound doped silicon-germanium alloy for

Details Annealing Group III-V compound doped silicon-germanium alloy for Annealing Group III-V compound doped silicon-germanium alloy for

1988-04-21

1989-07-18

Roy, Upendra

Metal treatment

Compositions

Heat treating

148 13, 437903, 428641, H01L 21223, H01L 29161, H01L 21205

Patent

active

048490334

ABSTRACT:
The thermoelectric conversion efficiency of a GaP dope SiGe alloy is improved about 30 percent by annealing the alloy at a temperature above the melting point of the alloy, preferably stepwise from 1200.degree. C. to 1275.degree. C. in air to form large grains having a size over 50 .mu.m and to form a Ge-Ga-P rich phase and a silicon rich phase containing SiP and SiO.sub.2 particles.

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