Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-08-01
2006-08-01
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C118S725000, C257SE21328, C257SE21498
Reexamination Certificate
active
07084068
ABSTRACT:
An annealing furnace, includes a processing chamber configured to store a substrate; a susceptor located in the processing chamber so as to load the substrate and having an auxiliary heater for heating the substrate at 650° C. or less, the susceptor having a surface being made of quartz; a gas supply system configured to supply a gas required for a thermal processing on the substrate in parallel to a surface of the substrate; a transparent window located on an upper part of the processing chamber facing the susceptor; and a main heater configured to irradiate a pulsed light on the surface of the substrate to heat the substrate from the transparent window, the pulsed light having a pulse duration of approximately 0.1 ms to 200 ms and having a plurality of emission wavelengths.
REFERENCES:
patent: 4698486 (1987-10-01), Sheets
patent: 5011794 (1991-04-01), Grim et al.
patent: 5683518 (1997-11-01), Moore et al.
patent: 5966594 (1999-10-01), Adachi et al.
patent: 6146135 (2000-11-01), Watanabe et al.
patent: 6329229 (2001-12-01), Yamazaki et al.
patent: 6410090 (2002-06-01), Wang
patent: 2002/0162505 (2002-11-01), Wang
patent: 2003/0017716 (2003-01-01), Dietze
patent: 2003/0232495 (2003-12-01), Moghadam et al.
patent: 2004/0060900 (2004-04-01), Waldhauer et al.
patent: 2004/0149715 (2004-08-01), Timans et al.
patent: 6-349821 (1994-12-01), None
patent: 07-183234 (1995-07-01), None
patent: 08-048595 (1996-02-01), None
patent: 09-082696 (1997-03-01), None
patent: 2002-057151 (2002-02-01), None
patent: 2003-273103 (2003-09-01), None
patent: 2004-193368 (2004-07-01), None
patent: 2004-311827 (2004-11-01), None
Japanese Office Action, entitled “Notification of Reasons for Refusal,” mailed by the Japanese Patent Office on Sep. 27, 2005 in counterpart Japanese Application No. P2003-181731.
Itani Takaharu
Ito Takayuki
Suguro Kyoichi
Coleman W. David
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
LandOfFree
Annealing furnace, manufacturing apparatus, annealing method... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Annealing furnace, manufacturing apparatus, annealing method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Annealing furnace, manufacturing apparatus, annealing method... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3711045