Semiconductor device manufacturing: process – Direct application of electrical current – To alter conductivity of fuse or antifuse element
Reexamination Certificate
2006-10-17
2006-10-17
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Direct application of electrical current
To alter conductivity of fuse or antifuse element
C118S641000, C257SE23083
Reexamination Certificate
active
07122448
ABSTRACT:
An annealing apparatus, includes a substrate stage placing a semiconductor substrate; a light source facing the substrate stage, configured to irradiate a pulsed light at a pulse width of approximately 0.1 ms to 100 ms on a surface of the semiconductor substrate; and a mask configured to selectively reduce intensity of the light transmitting a peripheral region along an outer edge of the semiconductor substrate, so as to define an irradiation region by the peripheral region.
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patent: 4151008 (1979-04-01), Kirkpatrick
patent: 6073576 (2000-06-01), Moslehi et al.
patent: 2004/0108519 (2004-06-01), Itani
patent: 3-253027 (1991-11-01), None
patent: 6-97100 (1994-04-01), None
Ito Takayuki
Suguro Kyoichi
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