Annealing apparatus, annealing method, and manufacturing...

Semiconductor device manufacturing: process – Direct application of electrical current – To alter conductivity of fuse or antifuse element

Reexamination Certificate

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C118S641000, C257SE23083

Reexamination Certificate

active

07122448

ABSTRACT:
An annealing apparatus, includes a substrate stage placing a semiconductor substrate; a light source facing the substrate stage, configured to irradiate a pulsed light at a pulse width of approximately 0.1 ms to 100 ms on a surface of the semiconductor substrate; and a mask configured to selectively reduce intensity of the light transmitting a peripheral region along an outer edge of the semiconductor substrate, so as to define an irradiation region by the peripheral region.

REFERENCES:
patent: 4151008 (1979-04-01), Kirkpatrick
patent: 6073576 (2000-06-01), Moslehi et al.
patent: 2004/0108519 (2004-06-01), Itani
patent: 3-253027 (1991-11-01), None
patent: 6-97100 (1994-04-01), None

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