Annealing

Details Annealing Annealing

2005-10-18

2005-10-18

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S022000, C438S239000, C438S240000, C438S660000, C438S212000, C438S689000, C257S303000, C257S310000, C257S296000, C257S295000, C257S315000, C118S715000, C118S719000, C118S716000, C118S724000

Reexamination Certificate

active

06955925

ABSTRACT:
A method and apparatus for annealing an integrated ferroelectric device (10) is disclosed in which the device (10) comprises a first layer of material capable of existing in a ferroelectric state and a second layer of material defining an integrated circuit below the first layer such as a microbridge thermal detector. The method comprises producing a pulse of energy, extending the pulse temporally using a pulse extender (200) and illuminating the first layer with the extended pulse. The duration and wavelength and fluence of the extended pulse are selected so that the material of the first layer is annealed into a ferroelectric state without exceeding the temperature budget of the integrated circuit. Application of the method in heating other articles which comprise a layer to be heated and a temperature sensitive layer is also disclosed. By extending the temporal width of the pulse, energy is supplied at a rate which ensures a more even heating of the first layer without damaging the temperature sensitive layer over time.

REFERENCES:
patent: 4437139 (1984-03-01), Howard
patent: 4456490 (1984-06-01), Dutta et al.
patent: 4645547 (1987-02-01), Krause et al.
patent: 4701592 (1987-10-01), Cheung
patent: 5219786 (1993-06-01), Noguchi
patent: 5309456 (1994-05-01), Horton
patent: 5310990 (1994-05-01), Russell et al
patent: 5337333 (1994-08-01), Daly et al.
patent: 5372859 (1994-12-01), Thakoor
patent: 5602677 (1997-02-01), Tournois
patent: 5626670 (1997-05-01), Varshney et al
patent: 6137553 (2000-10-01), Izumi et al.
patent: 6215099 (2001-04-01), Livshits
patent: 0 114 228 (1984-08-01), None
patent: 0 199 388 (1986-10-01), None
patent: WO 9717164 (1997-05-01), None
Martinez et al, “Magnified Expansion and Compression of Subpicosecond Pulses from a Frequency-Doubled ND:YLF Laser”, IEEE Journal of Quantum Electronics 25(10):2124-2128 (1989).
Matsui et al, “Laser annealing to produce ferroelectric-phase PbTiO/sub 3/thin films”, Journal of Applied Physics 52(8):5107-5111 (1981).

Affiliated with

Also associated with

Rating

Annealing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Annealing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Annealing will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3452799