Annealed wafer and method for manufacturing the same

Details Annealed wafer and method for manufacturing the same Annealed wafer and method for manufacturing the same

2007-12-25

2007-12-25

Hiteshew, Felisa (Department: 1722)

Chemistry of inorganic compounds

Silicon or compound thereof

Oxygen containing

C117S013000, C117S019000, C117S020000

Reexamination Certificate

active

10530557

ABSTRACT:
The present invention provides an annealed wafer which has a wafer surface layer serving as a device fabricating region and having an excellent oxide film dielectric breakdown characteristic, and a wafer bulk layer in which oxide precipitates are present at a high density at the stage before the wafer is loaded into the device fabrication processes to give an excellent IG capability, and a method for manufacturing the annealed wafer. The present invention is directed to an annealed wafer obtained by performing heat treatment on a silicon wafer manufactured from a silicon single crystal grown by the Czochralski method, wherein a good chip yield of an oxide film dielectric breakdown characteristic in a region having at least a depth of up to 5 μm from a wafer surface is 95% or more, and a density of oxide precipitates detectable in the wafer bulk and each having a size not smaller than a size showing a gettering capability is not less than 1×109/cm3.

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PCT International Search Report for PCT/JP03/12396 mailed on Dec. 24, 2003.

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