Anneal to decrease moisture absorbance of intermetal dielectrics

Details Anneal to decrease moisture absorbance of intermetal dielectrics Anneal to decrease moisture absorbance of intermetal dielectrics

1991-06-07

1992-08-18

Quach, T. N.

Fishing, trapping, and vermin destroying

437238, 437247, H01L 21283, H01L 2156

Patent

active

051399717

ABSTRACT:
A method of forming a device having an intermetal dielectric film which is formed and annealed to prevent a significant quantity of ambient moisture from being absorbed by the intermetal dielectric film prior to passivation layer deposition is disclosed. An intermetal dielectric layer is formed over a substrate having a interconnection layer. A second interconnect layer is formed over the IMD layer. The substrate with the intermetal dielectric is annealed anytime between IMD formation and passivation layer deposition to produce a film that does not absorb a significant quantity of ambient moisture, and therefore, longer queue times can be utilized between the anneal and subsequent processing. The present invention reduces the amount of water in the device which reduces hot electron induced device degradation.

REFERENCES:
patent: 4349609 (1982-09-01), Takeda et al.
Ghandhi, S. K., VSLI Fabrication Principles, John Wiley & Sons, 1983, pp. 420-430.
Hawley's Condensed Chemical Dictionary, 1987, Van Nostrand Reinhold Company, p. 1146.

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