Anneal of ruthenium seed layer to improve copper plating

Metal treatment – Process of modifying or maintaining internal physical... – Producing or treating layered – bonded – welded – or...

Reexamination Certificate

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C148S678000

Reexamination Certificate

active

07442267

ABSTRACT:
A ruthenium-containing thin film is formed. Typically, the ruthenium-containing thin film has a thickness in a range of about from 1 nm to 20 nm. The ruthenium-containing thin film is annealed in an oxygen-free atmosphere, for example, in N2forming gas, at a temperature in a range of about from 100° C. to 500° C. for a total time duration of about from 10 seconds to 1000 seconds. Thereafter, copper or other metal is deposited by electroplating or electroless plating onto the annealed ruthenium-containing thin film. In some embodiments, the ruthenium-containing thin film is also treated by UV radiation.

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