Anisotropy-based crystalline oxide-on-semiconductor material

Details Anisotropy-based crystalline oxide-on-semiconductor material Anisotropy-based crystalline oxide-on-semiconductor material

1998-07-30

2000-07-25

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step acting on the...

117 3, 117 4, 117 5, C30B 3304

Patent

active

060932422

ABSTRACT:
A semiconductor structure and device for use in a semiconductor application utilizes a substrate of semiconductor-based material, such as silicon, and a thin film of a crystalline oxide whose unit cells are capable of exhibiting anisotropic behavior overlying the substrate surface. Within the structure, the unit cells of the crystalline oxide are exposed to an in-plane stain which influences the geometric shape of the unit cells and thereby arranges a directional-dependent quality of the unit cells in a predisposed orientation relative to the substrate. This predisposition of the directional-dependent quality of the unit cells enables the device to take beneficial advantage of characteristics of the structure during operation. For example, in the instance in which the crystalline oxide of the structure is a perovskite, a spinel or an oxide of similarly-related cubic structure, the structure can, within an appropriate semiconductor device, exhibit ferroelectric, piezoelectric, pyroelectric, electro-optic, ferromagnetic, antiferromagnetic, magneto-optic or large dielectric properties that synergistically couple to the underlying semiconductor substrate.

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Wu et al., "Domain structure and polarization reversal in films of ferroelectric bismuth titanate", Ferroelectrics vol. 3, pp. 217-224, 1972.

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