Anisotropic superconducting device and fluxon device

Details Anisotropic superconducting device and fluxon device Anisotropic superconducting device and fluxon device

1994-03-18

1995-12-05

Crane, Sara W.

Superconductor technology: apparatus, material, process

High temperature devices, systems, apparatus, com- ponents,...

Josephson junction, per se or josephson junction with only...

505238, 505329, 505702, 257 31, 257 32, 257 33, 257 35, H01L 3912, H01L 3922, H01L 3924

Patent

active

054729343

ABSTRACT:
An anisotropic superconductor junction device consisting of a lower superconducting layer and an upper superconducting layer separated by a barrier layer, in which the upper and lower superconducting layers and the barrier layer each have a (103) crystal orientation in which the c axis is arranged in the same direction at an angle of 45 degrees relative to the plane of the junction.

REFERENCES:
patent: 4749888 (1988-06-01), Sakai et al.
patent: 5087605 (1992-02-01), Hegde et al.
Eom et al., "Growth Mechanisms and Properties at 90.degree. Grain Boundaries in YBa.sub.2 Cu.sub.3 O.sub.7 Thin Film," Phys. Rev. B, vol. 46, No. 18, Nov. 1, 1992, pp. 11902-11913.
Tsuge et al., "In-Situ Low-Temperature Growth of YBa.sub.2 Cu.sub.3 O.sub.7-x Films By Reactive Coevaporation," IEEE Trans. on Mag. vol. 27, No. 2, Mar. 1991, pp. 1009-1012.
Patent Abstracts, vol. 017, No. 110 (E-1329), Mar. 9, 1993, JP-A-04 293279, Oct. 16, 1992.
Superconductivity, Phys. Chem. Thecnol., vol. 3, No. 4, Apr. 1990, A. L. Vasil'ev, et al., "Electron Microscopy of YBa2Cu307-Delta Films", pp. 623-631.

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