Anisotropic etching of organic-containing insulating layers

Details Anisotropic etching of organic-containing insulating layers Anisotropic etching of organic-containing insulating layers

2005-01-18

2005-01-18

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S719000, C438S725000, C438S734000, C134S001200

Reexamination Certificate

active

06844266

ABSTRACT:
A method for anisotropic plasma etching of organic-containing insulating layers is disclosed. According to this method at least one opening is created in an organic-containing insulating layer formed on a substrate. These openings are created substantially without depositing etch residues by plasma etching said insulating layer in a reaction chamber containing a gaseous mixture which is composed such that the plasma etching is highly anisotropic. Examples of such gaseous mixtures are a gaseous mixture comprising a fluorine-containing gas and an inert gas, or a gaseous mixture comprising an oxygen-containing gas and an inert gas, or a gaseous mixture comprising HBr and an additive. The plasma etching of the organic-containing insulating layer can be performed using a patterned bilayer as an etch mask, said bilayer comprising a hard mask layer, being formed on said organic-containing insulating layer, and a resist layer being formed on said hard mask layer. A method is disclosed for forming a layer, protecting exposed surfaces of low-k dielectrics. More particularly the method comprises the steps of sealing exposed surfaces of a, preferably porous, low-k dielectric, by forming a protective layer on exposed surfaces during or after the step of patterning openings in the porous dielectric layers. Preferably this protective layer is formed by a N2/O2 plasma treatment of the exposed surfaces.

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“Transformer Coupled Plasma Dielectric Etch For 0.25 Micron Technologies”; Microelectronic Engineering; (Jan. 2000); vol. 50; No. 1-4; pp 75-80; Delsol et. al.

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