Anisotropic etching of organic-containing insulating layers

Details Anisotropic etching of organic-containing insulating layers Anisotropic etching of organic-containing insulating layers

2005-05-31

2005-05-31

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S717000, C438S723000, C438S724000, C438S734000, C438S700000

Reexamination Certificate

active

06900140

ABSTRACT:
A method for forming an opening in an organic insulating layer by covering the insulating layer with a bilayer containing a resist hard mask layer and a resist layer on top of the resist hard mask layer. The bilayer is patterned, and an opening is created by plasma etching the insulating layer in a reaction chamber containing a gas mixture. The plasma etching is controlled so that virtually no etch residues are deposited and so that the side walls of the opening are fluorinated to enhance the anisotropy of the etching. The gas mixture can be a mixture of a fluorine-containing gas and an inert gas, a mixture of an oxygen-containing gas and an inert gas, or a mixture of hydrogen bromide and an additive.

REFERENCES:
patent: 3816196 (1974-06-01), La Combe
patent: 4529475 (1985-07-01), Okano et al.
patent: 4661204 (1987-04-01), Mathur et al.
patent: 5173442 (1992-12-01), Carey
patent: 5176790 (1993-01-01), Arleo et al.
patent: 5269879 (1993-12-01), Rhoades et al.
patent: 5358902 (1994-10-01), Verhaar et al.
patent: 5591676 (1997-01-01), Hughes et al.
patent: 5759906 (1998-06-01), Lou
patent: 5886410 (1999-03-01), Chiang et al.
patent: 5892286 (1999-04-01), Toyoda et al.
patent: 5904154 (1999-05-01), Chien et al.
patent: 6162583 (2000-12-01), Yang et al.
patent: 6204168 (2001-03-01), Naik et al.
patent: 6492276 (2002-12-01), Huang
patent: 0 127 188 (1989-01-01), None
patent: 10012617 (1998-01-01), None
patent: 2024991 (1994-12-01), None
PCT International Search Report for PCT/BE98/00159 mailed Mar. 3, 1999.

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