Anisotropic etch method

Details Anisotropic etch method Anisotropic etch method

1996-02-20

1999-09-28

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438719, 438721, 438723, H01L 21302

Patent

active

059588012

ABSTRACT:
A method to anisotropically etch an oxide/silicide/poly sandwich structure on a silicon wafer substrate in situ, that is, using a single parallel plate plasma reactor chamber and a single inert cathode, with a variable gap between cathode and anode. This method has an oxide etch step and a silicide/poly etch step. The fully etched sandwich structure has a vertical profile at or near 90.degree. from horizontal, with no bowing or notching.

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