Anisotropic etch method

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

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438723, 438738, 438743, H01L 21302

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active

061331562

ABSTRACT:
A method to anisotropically etch an oxide/silicide/poly sandwich structure on a silicon wafer substrate in situ, that is, using a single parallel plate plasma reactor chamber and a single inert cathode, with a variable gap between cathode and anode. This method has an oxide etch step and a silicide/poly etch step. The fully etched sandwich structure has a vertical profile at or near 90.degree. from horizontal, with no bowing or notching.

REFERENCES:
patent: 4324611 (1982-04-01), Vogel et al.
patent: 4400865 (1983-08-01), Goth et al.
patent: 4418094 (1983-11-01), See et al.
patent: 4419201 (1983-12-01), Levinstein et al.
patent: 4502915 (1985-03-01), Carter et al.
patent: 4528066 (1985-07-01), Merkling et al.
patent: 4680086 (1987-07-01), Thomas et al.
patent: 4937643 (1990-06-01), Deslauriers et al.
patent: 4971655 (1990-11-01), Stefano et al.
patent: 5169487 (1992-12-01), Langley et al.
patent: 5201993 (1993-04-01), Langley
patent: 5271799 (1993-12-01), Langley
patent: 5899749 (1999-05-01), Becker et al.
"The Effect of Added Acetylene on the RF Discharge Chemistry of C.sub.2 F.sub.6, A Mechanistic Model For Fluorocarbon Plasmas"; Truesdole et al.; J. Appl. Physics, vol. 51, No. 5, pp. 2909-2913, May 1980.
Richard S. Muller et al., "Device Electronics for Integrated Circuits", Second Edition, pp. 103-104.
Betty Prince, "Semiconductor Memories", A Handbook of Design, Manufacture, and Application, Second Edition, pp. 125-126.

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