Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1997-08-11
2000-10-17
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438723, 438738, 438743, H01L 21302
Patent
active
061331562
ABSTRACT:
A method to anisotropically etch an oxide/silicide/poly sandwich structure on a silicon wafer substrate in situ, that is, using a single parallel plate plasma reactor chamber and a single inert cathode, with a variable gap between cathode and anode. This method has an oxide etch step and a silicide/poly etch step. The fully etched sandwich structure has a vertical profile at or near 90.degree. from horizontal, with no bowing or notching.
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Goudreau George
Micron Technology Inc
Powell William
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