Anisotropic deposition of silicon dioxide

Details Anisotropic deposition of silicon dioxide Anisotropic deposition of silicon dioxide

1989-07-31

1991-05-07

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437243, 148DIG118, H01L 2190

Patent

active

050136917

ABSTRACT:
In a radio-frequency plasma deposition reactor (10), SiO.sub.2 is deposited from a source (16) of tetraethoxysilane (TEOS). The deposition is made to be anisotropic, that is, to be deposited preferentially on horizontal surfaces, by use in the deposition atmosphere of a constituency such as NH.sub.3 or NF.sub.3 which inhibits SiO.sub.2 deposition, along with a radio-frequency power in excess of 100 watts, which preferentially removes the inhibiting gas from horizontal surfaces through ion impact.

REFERENCES:
patent: 4845054 (1989-07-01), Mitchener
Wolf, S. ed., Silicon Processing for the VLSI Era, Lattice Press, Sunset Beach, CA (1986), p. 184.
"Step Coverage Prediction in Low-Pressure Chemical Vapor Deposition", by G. B. Raupp et al., Chemistry of Materials, vol. 1, No. 2, 1989, pp. 207-214.
"Silicon Dioxide Films Produced of PECVD of TEOS and TMCTS", by D. A. Webb et al., Electrochemical Society, Spring Meeting Abstracts, Abstract No. 181, May 8, 1989, p. 262.

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