Anisotropic conductive interconnect material for electronic devi

Details Anisotropic conductive interconnect material for electronic devi Anisotropic conductive interconnect material for electronic devi

1997-08-12

2000-01-04

Everhart, Caridad

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

438610, 257741, H01L 2943

Patent

active

060113073

ABSTRACT:
Conductive interconnections are formed by depositing an adhesive material, made up of ferromagnetic particles dispersed within a matrix material, on a semiconductor substrate, such as an electronic component, and applying a magnetic field between an exposed surface of the adhesive material and an attached surface of the adhesive material (abutting the semiconductor substrate), such that a plurality of the ferromagnetic particles move and align within the matrix material under the influence of the magnetic field. One method of the present invention comprises depositing the adhesive material on a contact site of a first electronic component. A second electronic component having a contact site is aligned over the adhesive material and a magnetic field is applied between the first electronic component and the second electronic component. The first electronic component and the second electronic component are then pressed together such that a portion of the plurality of the ferromagnetic particles makes electrical contact with both the first electronic component bond pad and its corresponding second electronic component bond pad.

REFERENCES:
patent: 4448837 (1984-05-01), Ikeda et al.
patent: 4548862 (1985-10-01), Hartman
patent: 4644101 (1987-02-01), Jin et al.
patent: 4737112 (1988-04-01), Jin et al.
patent: 4838347 (1989-06-01), Dentini et al.
patent: 4923739 (1990-05-01), Jin et al.
patent: 5087494 (1992-02-01), Calhoun et al.
patent: 5155302 (1992-10-01), Nguyen et al.
patent: 5258577 (1993-11-01), Clements
patent: 5284779 (1994-02-01), Miyanaga
patent: 5305126 (1994-04-01), Kobayashi et al.
patent: 5443876 (1995-08-01), Koskenmaki et al.
patent: 5468681 (1995-11-01), Pasch
patent: 5478007 (1995-12-01), Marrs
patent: 5522962 (1996-06-01), Koskenmaki et al.
patent: 5769996 (1998-06-01), McArdle et al.
V.E. Gul et al. "Formation of electrically conductive structures in a polymeric material under the action of a magnetic field," Soviet Plastics, No. 4, pp. 51-54 (Apr. 1966).

Affiliated with

Also associated with

Rating

Anisotropic conductive interconnect material for electronic devi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Anisotropic conductive interconnect material for electronic devi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Anisotropic conductive interconnect material for electronic devi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1074712