Angled wafer rotating ion implantation

Details Angled wafer rotating ion implantation Angled wafer rotating ion implantation

2007-01-02

2007-01-02

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C372S050110, C438S045000, C438S514000

Reexamination Certificate

active

10323889

ABSTRACT:
Ion implantation by mounting a semiconductor wafer on a rotating plate that is tilted at an angle relative to an ion implantation flux. The tilt angle and the ion implantation energy are adjusted to produce a desired implantation profile. Ion implantation of mesa structures, either through the semiconductor wafer's surface or through the mesa structure's wall is possible. Angled ion implantation can reduce or eliminate ion damage to the lattice structure along an aperture region. This enables beneficial ion implantation profiles in vertical cavity semiconductor lasers. Mask materials, beneficially that can be lithographically formed, can selectively protect the wafer during implantation. Multiple ion implantations can be used to form novel structures.

REFERENCES:
patent: 5245622 (1993-09-01), Jewell et al.
patent: 5328854 (1994-07-01), Vakhshoori et al.
patent: 5637511 (1997-06-01), Kurihara

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