Angled lateral pocket implants on p-type semiconductor devices

Details Angled lateral pocket implants on p-type semiconductor devices Angled lateral pocket implants on p-type semiconductor devices

1994-03-31

1995-04-25

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG18, H01L 21265

Patent

active

054098483

ABSTRACT:
The punchthrough capacity of a p-type semiconductor device is significantly improved by nonuniformly doping the p-channel with n-type implants such as phosphorus. The n-type dopants are implanted at large angles to form pocket implants within the channel region. The dose of the implants, angle of the implants and the thermal cycle annealing of the implants will be optimized for maximum punchthrough capability without substantially detracting from the performance of the semiconductor device.

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