Angled implant to improve high current operation of transistors

Details Angled implant to improve high current operation of transistors Angled implant to improve high current operation of transistors

1998-02-17

1999-11-09

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With base region having specified doping concentration...

257593, H01L 21331

Patent

active

059820225

ABSTRACT:
Method and apparatus for improving the high current operation of bipolar transistors while minimizing adverse affects on high frequency response are disclosed. A local implant to increase the doping of the collector at the collector to base interface is achieved by the use of an angled ion implant of collector impurities through the emitter opening. The resulting area of increased collector doping is larger than the emitter opening, which minimizes carrier injection from the emitter to the collector, but is smaller than the area of the base.

REFERENCES:
patent: 4994881 (1991-02-01), Gomi
patent: 5183768 (1993-02-01), Kameyama et al.
patent: 5321301 (1994-06-01), Sato et al.
patent: 5336926 (1994-08-01), Mattews
patent: 5344787 (1994-09-01), Nagalingam et al.
patent: 5698459 (1997-12-01), Grubisich et al.

Affiliated with

Also associated with

Rating

Angled implant to improve high current operation of transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Angled implant to improve high current operation of transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Angled implant to improve high current operation of transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1460281