Angled implant to improve high current operation of bipolar tran

Details Angled implant to improve high current operation of bipolar tran Angled implant to improve high current operation of bipolar tran

1995-08-25

1998-02-17

Tsai, Jey

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

438370, 148DIG10, 148DIG11, H01L 21331

Patent

active

057190828

ABSTRACT:
Method and apparatus for improving the high current operation of bipolar transistors while minimizing adverse affects on high frequency response are disclosed. A local implant to increase the doping of the collector at the collector to base interface is achieved by the use of an angled ion implant of collector impurities through the emitter opening. The resulting area of increased collector doping is larger than the emitter opening, which minimizes carrier injection from the emitter to the collector, but is smaller than the area of the base.

REFERENCES:
patent: 5183768 (1993-02-01), Kameyama et al.
patent: 5344787 (1994-09-01), Nagalingam et al.

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