Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With means to increase current gain or operating frequency
Reexamination Certificate
2007-04-03
2007-04-03
Baumeister, B. William (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With means to increase current gain or operating frequency
C257SE29171
Reexamination Certificate
active
09921948
ABSTRACT:
Method and apparatus for improving the high current operation of bipolar transistors while minimizing adverse affects on high frequency response are disclosed. A local implant to increase the doping of the collector at the collector to base interface is achieved by the use of an angled ion implant of collector impurities through the emitter opening. The resulting area of increased collector doping is larger than the emitter opening, which minimizes carrier injection from the emitter to the collector, but is smaller than the area of the base.
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Baumeister B. William
Farahani Dana
Micro)n Technology, Inc.
Schwegman Lundberg Woessner & Kluth P.A.
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