Angled-facet flared-waveguide traveling-wave laser amplifiers

Details Angled-facet flared-waveguide traveling-wave laser amplifiers Angled-facet flared-waveguide traveling-wave laser amplifiers

1989-11-13

1990-10-23

Moskowitz, Nelson

Amplifiers

Parametric amplifiers

Semiconductor type

350 963, H01S 308

Patent

active

049655256

ABSTRACT:
The effective reflectivity of angled antireflection-coated facets of a traveling-wave laser amplifier is significantly reduced by flaring the waveguiding portion of the amplifier in the immediate vicinity of the facets. In this way, low-reflectivity facets are achieved with simple low-cost antireflection coatings, thereby providing economical amplifiers characterized by wide bandwidth and high output saturation power.

REFERENCES:
patent: 3980392 (1976-09-01), Auracher
patent: 4817106 (1989-03-01), Thompson
patent: 4872180 (1989-10-01), Rideant et al.
Kaneno et al., "Transverse Mode Control . . . Model Filters"; 1988; IEEE Cat. No. 88CH 2528-8, Int. Elec. Dev. Mtg.; SF, Calif., pp. 315-318.
Zah et al.; "1.3 mm GaInAsP Near . . . Coatings"; 9/29/88, Electronics Letters, vol. 24, #20, pp. 1275-1276.
Salzman et al; "Modal Coupling in tilted . . . Amplifiers"; 6/88, Optics Letters, vol. 13, #6, pp. 455-457.
Salzman et al.; "The Tilted Waveguide Semiconductor Laser Amplifier"; J. Appl. Phys., vol. 64, #4, 8/15/88.
"Fabrication and Performance of 1.5 .mu.m GaInAsP Travelling-Wave Laser Amplifiers with Angled Facets", C. E. Zah et al., Electronics Letters, vol. 23, No. 19, pp. 990-992, Sep. 10, 1987.
"1.3 .mu.m GaInAsP Near-Travelling-Wave Laser Amplifiers made by Combination of Angled Facets and Antireflection Coatigs", C. E. Zah et al, Electron. Lett., vol. 24, No. 20, pp. 1275-1276, Sep. 29, 1988.
"Recent Progress in Semiconductor Laser Amplifiers", T. Saitoh et al., J. Lightwave Technol., vol. 6, No. 11, pp. 1656-1664, Nov. 1988.

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