Analysis of silicon concentration in phosphoric acid etchant...

Details Analysis of silicon concentration in phosphoric acid etchant... Analysis of silicon concentration in phosphoric acid etchant...

2011-08-30

2011-08-30

Warden, Jill (Department: 1777)

Chemistry: analytical and immunological testing

Silicon containing

C436S124000, C436S125000

Reexamination Certificate

active

08008087

ABSTRACT:
Low concentrations of silicon in an etchant solution are analyzed by adding a predetermined concentration of fluoride ions to a test solution comprising a predetermined volume of the etchant solution, and measuring the concentration of fluoride ions in the test solution. Reaction with silicon ions in the test solution reduces the concentration of fluoride ions, which are present in stoichiometric excess, so that the silicon concentration of the etchant solution can be calculated from the difference between the predetermined and measured concentrations of fluoride ions in the test solution. The method is especially suited for analysis of silicon nitride etchants comprising a high concentration of phosphoric acid.

REFERENCES:
patent: 6890758 (2005-05-01), Shalyt et al.
patent: 2009/0229995 (2009-09-01), Shalyt et al.

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