Analysis methods of leakage current luminescence in CMOS...

Details Analysis methods of leakage current luminescence in CMOS... Analysis methods of leakage current luminescence in CMOS...

2005-06-21

2005-06-21

Pert, Evan (Department: 2826)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

C438S016000, C700S121000

Reexamination Certificate

active

06909295

ABSTRACT:
Disclosed are a method and system for analyzing leakage current luminescence in CMOS circuits. The method comprises the steps of collecting light emission data from each of a plurality of CMOS circuits, and separating the CMOS circuits into first and second groups. For the first group of CMOS circuits, the emission data from the CMOS circuits are analyzed, based on the presence or absence of leakage light from the CMOS circuits, to identify logic states for the CMOS circuits. For the second group of CMOS circuits, the emission data from the CMOS circuits are analyzed, based on modulation of the intensity of the light from the CMOS circuits, to determine values for given parameters of the circuits. These parameters may be, for example, temperature, cross-talk or power distribution noise.

REFERENCES:
J.A. Kash et al., “Dynamic Internal Testing of CMOS Circuits Using Hot Luminescense”, Jul. 1997, IEEE Electron Device Letters, vol. 18, No. 7, pp. 330-332.
G. Romano et al., “CMOS-Circuit Degradation Analysis Using Measurement of the Substrate Current”, May 1997, IEEE Transactions on Electron Device Letters, vol. 44, No. 5, pp. 910-912.

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