Analog switch for low supply voltage MOS integrated circuits

Details Analog switch for low supply voltage MOS integrated circuits Analog switch for low supply voltage MOS integrated circuits

1995-02-27

1997-11-04

Wambach, Margaret Rose

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Utilizing three or more electrode solid-state device

327310, 327319, H03K 17687

Patent

active

056844255

ABSTRACT:
Electronic switch for low-voltage supply circuits completed with CMOS technology and comprising a first, a second and a third circuit element (SW1 ,SW2,SW3) consisting each of a pair of complementary transistors. The first and second of said elements (SW1,SW2) are inserted between two connection terminals of the switch (A,B) while the third element SW3 is inserted between a node (C) included between the first and the second element of a voltage reference (VCM). The first and second element are driven to conduction in phases (.phi.1) not overlapping the phases (.phi.2) in which it conducts the third element.

REFERENCES:
patent: 3636378 (1972-01-01), Chashi et al.
Patent Abstracts of Japan, vol. 10, No. 352 (E-458), 27 Nov. 1986 & JP-A-61 150 521 (Toshiba Corp.), 9 Jul. 1986.
"Fast CMOS switch provides 60-dR isolation at 10 MHz" Electronic Design vol. 30, No. 8 Apr. 15, 1982, p. 260.

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