Analog switch device having threshold change reducing means

Details Analog switch device having threshold change reducing means Analog switch device having threshold change reducing means

1982-07-15

1985-07-16

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307573, 307583, 307296R, H03K 17687, H03K 301

Patent

active

045298971

ABSTRACT:
An analog switch device has p- and n-channel metal oxide semiconductor field effect transistors, each having a source electrode, a drain electrode, a gate electrode and a substrate electrode. The p- and n-channel metal oxide semiconductor field effect transistors are connected parallel to each other. First and second analog signals are received and produced at a pair of nodes between the p- and n-channel metal oxide semiconductor field effect transistors. Control signals which are inverted with each other are respectively supplied to the gate electrodes of the p- and n-channel metal oxide semiconductor field effect transistors. A voltage buffer circuit is provided for applying a predetermined voltage to the substrate electrode of one of the p- and n-channel metal oxide semiconductor field effect transistors so as to decrease a change in a threshold voltage due to the source-substrate bias effect.

REFERENCES:
patent: 3457435 (1969-07-01), Burns et al.
patent: 3866064 (1975-02-01), Gregory et al.
patent: 4001606 (1977-01-01), Dingwall
CMOS Quad Analog Switch, Solid State Scientific, Inc., Nov. 1976, p. 168.

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