Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1985-04-26
1987-12-08
Zazworsky, John
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307572, 307296R, H03K 1716, H03K 17687
Patent
active
047120258
ABSTRACT:
The source and drain of a first depletion-mode MESFET (DFET) define the controlled current path of a switch, the switch being open or closed depending on whether the gate-to-source voltage (V.sub.gs) for the first DFET is greater or less than the pinch-off voltage (V.sub.p) for the first DFET. The first DFET has its gate connected to a first circuit node. A second DFET, connected as a source follower, has its gate connected to the source of the first DFET. A first diode has its anode connected to the first circuit node and its cathode connected to a second circuit node. A second diode has its cathode connected to the second circuit node and its a node connected to the source of the second DFET. At least one additional diode is connected anti-parallel to the first diode between the first and second nodes. A constant current source draws current either through the first diode or through the additional diode(s) in dependence upon the state of a control signal applied to a current steering network connected across the first diode.
REFERENCES:
patent: 3586880 (1971-06-01), Fitzwater, Jr.
patent: 3610953 (1971-10-01), Gordon et al.
patent: 4323796 (1982-04-01), Lathrope
Lovell William S.
Smith-Hill John
Triquint Semiconductor, Inc.
Winkelman John D.
Zazworsky John
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