An overheating detection circuit including a reversely biased ju

Details An overheating detection circuit including a reversely biased ju An overheating detection circuit including a reversely biased ju

1990-07-17

1991-12-03

Swann, III, Glen R.

Communications: electrical

Condition responsive indicating system

Specific condition

307310, 340598, 357 28, 374157, 374178, G08B 1706

Patent

active

050703226

ABSTRACT:
An overheating detection circuit has a simple circuit construction and may be formed in the same substrate as that of a power integrated circuit. It can produce a large output signal in response to detection of a temperature within a preselected range of detection temperatures. The circuit includes a reversely biased junction having a temperature dependent reverse leakage current, means for amplifying the reverse leakage current, and means for producing a voltage in accordance with the amplified reverse leakage current and for producing a signal when the voltage exceeds a threshold voltage to indicate that the power integrated circuit is overheated.

REFERENCES:
patent: 4730228 (1988-03-01), Einzinger et al.
patent: 4854731 (1989-08-01), Jenkins
patent: 4924212 (1990-05-01), Fruhauf et al.
E. Habekotte, Silicon Temperature Sensors, Bull. ASE/UCS 76 (1985) 5, 9 mars, pp. 272-276.
J. Proctor, Temperature Transducer IC Is Linear Over Wide Range, Electronic Design, Apr. 5, 1984, pp. 133-140.
O. H. Schade; "Thermal Shutdown Circuitry," RCA Technical notes; No. 1270, Mar, 2, 1981, pp. 1-3.
D. M. Embree; "Thermal Shutdown Circuit," Technical Digest--Western Electric; Nos. 72, Oct. 1983, pp. 15-16.

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