An integrated semiconductor device having a buried semiconductor

Details An integrated semiconductor device having a buried semiconductor An integrated semiconductor device having a buried semiconductor

1994-07-22

1996-12-31

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 41, 437 44, 437 45, H01L 21265

Patent

active

055894100

ABSTRACT:
A structure and its fabrication method of an integrated semiconductor device including circuit elements such as MOSFETs. A well is formed in the semiconductor substrate within windows of a field oxide layer. A lightly-doped semiconductor layer is selectively formed on the exposed surface of the well. A channel region and a pair of source and drain regions of a MOSFET are formed in the lightly-doped semiconductor layer. The highly-doped buried semiconductor layer of the same conductivity type as that of the lightly-doped semiconductor layer is formed under the channel region in the lightly-doped semiconductor layer. The structural features and fabrication method provides a great degree of freedom in designing a MOSFET having a further shorter-channel length without deteriorating its drivability and punch-through breakdown voltage.

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