An equipment protection semiconductor integrated circuit

Details An equipment protection semiconductor integrated circuit An equipment protection semiconductor integrated circuit

1992-09-08

1994-04-19

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with other solid-state active device in integrated...

257177, 257577, 257587, H01L 2974, H01L 2972

Patent

active

053048237

ABSTRACT:
A semiconductor integrated circuit is provided which can have a high holding current without the penalty of a high gate current. Such a circuit includes a PNPN device and junction bipolar transistor in which a further doped region of the same conductivity type as the transistor collector region and more heavily doped than the collector region prevents the devices affecting each other. The junction bipolar transistor has a current gain of at least 10 and base-collector and base-emitter junctions with reverse breakdown voltages of at least 50 volts. A PN diode can also be used in the circuit.

REFERENCES:
patent: 4509089 (1985-04-01), Svedberg
patent: 4529998 (1985-07-01), Ladi et al.
patent: 4868703 (1989-09-01), Borkowicz
Patent Abstracts of Japan, vol. 15, No. 390 (E-1118) Oct. 3, 1991 & JP-A-31 55 675 (Shindengen Electric).

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