Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1996-03-07
1998-01-27
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257229, 257230, 257250, 257448, 257462, 257291, H01L 27148
Patent
active
057124973
ABSTRACT:
An amplifying type photoelectric converting device is disclosed. The device includes: a semiconductor substrate of a first conductive type; a well portion of a second conductive type for accumulating signal charges generated by photoelectric conversion; a semiconductor region of the first conductive type provided in a region in the well portion; a first gate region including a first electrode; and a second gate region being adjacent to the first gate region and including a second electrode. An active element is formed between the semiconductor region and the semiconductor substrate, and a change in an operational characteristic of the active element which is generated by the signal charges is used as an output signal.
REFERENCES:
patent: 5285091 (1994-02-01), Hamasaki
T. Nakamura, K. Matsumoto, R. Hyuga, & A. Yusa of Olympus Optical Co., Ltd. "Gate Accumulating Type MOS Phototransistor Image Sensor," in Proceedings of the 1986 National Convention of the Institute of Television Engineers of Japan, 1986.
J. Hynecek of Texas Instruments Inc., "A New Device Architecture Suitable for High-Resolution and High-Performance Image Sensors," in IEEE Transactions On Electron Devices, vol. 35, No. 5, May 1988, pp. 646-652.
J. Hynecek of Texas Instruments, Inc., "BCMD--An Improved Photosite Structure for High-Density Image Sensors, " in IEEE Transactions On Electron Devices, vol. 38, No. 5, May 1991, pp. 1011-1020.
Kudo Hiroaki
Watanabe Takashi
Conlin David G.
Oliver Milton
Sharp Kabushiki Kaisha
Tran Minh-Loan
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