Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Charge transfer device
Reexamination Certificate
2008-01-08
2008-01-08
Chambliss, Alonzo (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Charge transfer device
C257S238000, C257S292000
Reexamination Certificate
active
07317214
ABSTRACT:
An amplifying solid-state image pickup device includes photoelectric conversion transfer parts respectively composed of a photodiode and a transfer transistor, and a switched capacitor amplification part provided for every k (k: natural number) photoelectric conversion transfer parts. The switched capacitor amplification part includes an inverting amplifier composed of transistors, a reset transistor and a capacitor respectively inserted between input and output of the inverting amplifier, and a select transistor inserted between output side of the inverting amplifier and a vertical signal line. Input side of the inverting amplifier of the switched capacitor amplification part serves as a signal charge storage part common to k photoelectric conversion transfer parts. Output side of the inverting amplifier of the switched capacitor amplification part is connected to the vertical signal line via the select transistor.
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Korean Office Action issued May 10, 2006 in the counterpart Korean Application.
Ikuko Inoue et al., “New LV-BPD (Low Voltage Buried Photo-Diode) for CMOS Imager”, IEDM Tech. Digest, 1999, pp. 883-886.
Chambliss Alonzo
Harness Dickey & Pierce
Sharp Kabushiki Kaisha
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