Amplifying optical fiber, optical fiber amplifier and...

Optical waveguides – Having particular optical characteristic modifying chemical... – Of waveguide core

Reexamination Certificate

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C385S147000, C372S006000, C359S341320

Reexamination Certificate

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06937810

ABSTRACT:
This invention relates to an optical fiber for amplification suitable for amplifying signals in the L-band, an optical fiber amplifier including the optical fiber, and an optical transmission system. The optical fiber amplifier according to the invention includes a silica-based optical fiber as an optical fiber for amplification, which has a core region doped with Er and Al. The optical fiber for amplification has an Er concentration of 1,500 wt.ppm or less, and has the characteristics at a wavelength of 1.53 μm of: an absorption loss of 10 dB/m or more but 25 dB/m or less; and an unsaturated absorption of 900 dB or less.

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C. Randy Giles, “Modeling Erbium-Doped Fiber Amplifiers”, Journal of Lightwave Technology, vol. 9, No. 2., FEb. 1991, pp. 271-283.
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W. L. Barnes et al., “Absorption and Emission Cross Section of ER3+Doped Silica Fibers”, IEEE Journal of Quantum Electronics, vol. 27., No. 4, Apr. 1991, pp. 1004-1010.
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H. Ono et al., “A 1.58 μm BAND ER3+-Doped Fiber Amplifier”, The Institute of Electronics, Information and Communication Engineers, Proceedings of the IECE General Conference, 1997pp. 270-271 & pp. 1-4 (English Translation).
A. Mori et al., “Gain Flattened Er3+-Doped Tellurite Fibre Amplifier for WDM Signals in the 1581-1616nm Wavelength Region”, Electronics Letters, Mar. 2000, vol. 36, No. 7, pp. 621-622.
K.P. Hansen et al., “Design Optimisation of Erbium-Doped Fibres for Use in L-Band Amplifiers”, Electronics Letters, Sep., 2000, vol. 36, No. 20, pp. 1685-1688.
Mori, A., “Gain flattened Er3+-doped tellurite fibre amplifier for WDM signals in the 1581-1616 nm wavelength region”, Electronics Letters, Mar., 2000, vol. 36, No. 7, pp. 621-622.
Hansen, K.P. et al., “Design optimisation of erbium-doped fibres for use in L-band amplifiers”, Electronics Letters, Sep., 2000, vol. 36, No. 20, pp. 1685-1686.

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