Amplifying gate thyristor with gate turn-off (G.T.O.)

Details Amplifying gate thyristor with gate turn-off (G.T.O.) Amplifying gate thyristor with gate turn-off (G.T.O.)

1978-01-04

1979-12-04

Clawson, Jr., Joseph E.

357 68, 357 86, 357 89, 357 90, H01L 2974

Patent

active

041774787

ABSTRACT:
The invention relates to an amplifying gate thyristor with gate turn-off (G.T.O.) for electric power switching. A P+ type conduction layer is disposed in the thickness of the base P1, forming a buried grate under the main emitter and penetrating down to an N layer designed to transmit to the base the negative pulses applied to the gate opening the thyristor.

REFERENCES:
patent: 3641403 (1972-02-01), Nakata
patent: 3693054 (1972-09-01), Anderson
patent: 3896476 (1975-07-01), Kawakami
patent: 3906545 (1975-09-01), Schlangenotto et al.
patent: 3967294 (1976-06-01), Takase et al.
J. Shimizu et al., "High-Voltage High-Power Gate-Assisted Turn-Off Thyristor for High-Frequency Use," IEEE Trans. on Elec. Dev., vol. ED-23, #8, Aug. 1976, pp. 883-887.

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