Amplifying gate thyristor having high gate sensitivity and high

Details Amplifying gate thyristor having high gate sensitivity and high Amplifying gate thyristor having high gate sensitivity and high

1983-05-23

1988-04-19

Clawson, Jr., Joseph E.

357 20, 357 30, 357 55, 357 86, H01L 2974

Patent

active

047393874

ABSTRACT:
A thyristor is provided having high gate sensitivity in combination with high dv/dt ratings. An amplifying gate structure is utilized having a pilot thyristor region including a first portion characterized by a first extent and at least one projection of said first portion extending therefrom and having a lateral extent greater than the extent of said first portion; and means substantially isolating said pilot thyristor region from the remainder of the device which means surround said first portion and the sides of said projection.

REFERENCES:
patent: 3995305 (1976-11-01), Voss

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