Amplifying feedback FET semiconductor element

Details Amplifying feedback FET semiconductor element Amplifying feedback FET semiconductor element

1991-07-19

1992-11-03

Larkins, William D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257280, 257287, H01L 29812

Patent

active

051609843

ABSTRACT:
In an amplifying feedback-type FET semiconductor element for use as a wide-band microwave amplifier in telecommunications system such as a radar, a monolithic IC feedback circuit is located between at least two parallel FET cells of an FET semiconductor element and also between gate and drain lead electrodes of the FET semiconductor element. The feedback circuit includes at least two connecting lines and at least one passive element and is connected to the two lead electrodes. With this arrangement, it is possible to reduce the total length of said connecting lines to a minimum, thus guaranteeing a frequency characteristic showing a flat gain over a wide band.

REFERENCES:
patent: 4760350 (1988-07-01), Ayasli
patent: 4786881 (1988-11-01), Eron et al.
Edwards, Foundation for Microstrip Circuit Design, pp. 17-29, 34-47, 51-65, 80-95, .COPYRGT.1981.
Compton, Solid State Microwave Devices and Circuit II, pp. 36-49, .COPYRGT.Jan. 1989.
Ramo et al., Fields & Waves in Communication Electronics, pp. 407-411, .COPYRGT.1984.
Pengelly, Microwave Field-Effect Transistors-Theory, Design and Application, copyright 1982, pp. 78-79.

Affiliated with

Also associated with

Rating

Amplifying feedback FET semiconductor element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Amplifying feedback FET semiconductor element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Amplifying feedback FET semiconductor element will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2053486