Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2005-04-12
2005-04-12
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257S014000, C257S030000, C257S295000, C360S324000, C360S324100, C360S324110, C360S324120, C360S324200, C360S325000
Reexamination Certificate
active
06879013
ABSTRACT:
Ultrafast solid state amplifiers of electrical current, including power amplification devices, use injection of spin-polarized electrons from a magnetic region into another magnetic region through a semiconductor control region and electron spin precession inside the control region induced by a magnetic field resulting from a current flowing through a conductive nanowire. The amplifiers may include magnet-semiconductor-magnet heterostructures and are able to operate on electric currents and electromagnetic waves having frequencies up to 100 GHz or more.
REFERENCES:
patent: 6355953 (2002-03-01), Kirczenow
Sarma, Sankar Das, “Spintronics” American Scientist, vol. 89, pp. 516-523 (Nov.-Dec. 2001).
Wolf, S.A. et al., “Spintronics: A Spin-Based Electronics Vision for the Future” Science, vol. 294, pp. 1488-1495 (Nov. 16, 2001).
Bratkovski Alexandre M.
Osipov Viatcheslav V.
Dickey Thomas L
Hewlett--Packard Development Company, L.P.
Tran Minhloan
LandOfFree
Amplifiers using spin injection and magnetic control of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Amplifiers using spin injection and magnetic control of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Amplifiers using spin injection and magnetic control of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3390777