Amplifier using lateral and vertical transistors

Details Amplifier using lateral and vertical transistors Amplifier using lateral and vertical transistors

1980-03-18

1982-06-08

Tokar, Michael J.

Amplifiers

With semiconductor amplifying device

Including differential amplifier

330257, 307303, H03F 345

Patent

active

043341969

ABSTRACT:
In addition to the usual field-effect transistor structures available in CMOS-type integrated circuitry, certain bipolar transistor structures are also available for use in linear amplifier circuits combining both bipolar and FET devices. One of the transistor structures available, i.e., a vertical transistor, has high current gain but its collector region, integral to the substrate, is committed to substrate potential. The other of the bipolar transistor structures available, i.e., a lateral transistor, has an uncommitted collector, but has low current gain. A cascade connection of both bipolar transistor types provides a composite transistor with high current gain and uncommitted collector useful in combination with field-effect transistor structures to form novel amplifier arrangements.

REFERENCES:
patent: 3852679 (1974-12-01), Schade
patent: 4142115 (1979-02-01), Nakata
Electronics, Apr. 27, 1978, p. 134.
"Driver ICs Use New Semi Process", EDN, Sep. 20, 1979, pp. 54-55.

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