Amplifiers – With semiconductor amplifying device – Including plural stages cascaded
Reexamination Certificate
2009-07-30
2011-10-04
Mottola, Steven (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including plural stages cascaded
C330S283000
Reexamination Certificate
active
08031005
ABSTRACT:
Techniques for designing a low-noise amplifier (LNA) for operation over a wide range of input power levels. In an exemplary embodiment, a first gain path is provided in parallel with a second gain path. The first gain path includes a differential cascode amplifier with inductor source degeneration. The second gain path includes a differential cascode amplifier without inductor source degeneration. The cascode transistors of the gain paths may be selectively biased to enable or disable the first and/or second gain path. By selectively biasing the cascode transistors and input transistors, various combinations of the first and second gain paths may be selected to provide an optimized gain configuration for any input power level.
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patent: 2005/0068106 (2005-03-01), Irvine
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patent: 1748553 (2007-01-01), None
Che-Sheng Chen et al: “A 2.5GHz 90nm CMOS Triple Gain Mode LNA for WiMAX Applications” Signals, Systems and Electronics, 2007. ISSSE '07. International Symposium on, IEEE, PI, Jul. 1, 2007, pp. 367-369, XP031129290 ISBN: 978-1-4244-1448-2 pa.
International Search Report and Written Opinion—PCT/US2010/028353, International Search Authority—European Patent Office—Jul. 6, 2010.
Muthali Harish S.
Xiong Zhijie
Mobarhan Ramin
Mottola Steven
QUALCOMM Incorporated
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