Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1998-03-31
2000-02-15
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257196, H01L 310328, H01L 31072
Patent
active
060256141
ABSTRACT:
The amplifier semiconductor element of this invention includes a field effect transistor of which a threshold voltage V.sub.th has a predetermined relationship with an operating voltage.
REFERENCES:
patent: Re33584 (1991-05-01), Mimura
patent: 4916500 (1990-04-01), Yazawa et al.
patent: 4990974 (1991-02-01), Vinal
patent: 5300795 (1994-04-01), Saunier et al.
patent: 5440160 (1995-08-01), Vinal
patent: 5486710 (1996-01-01), Kitano
patent: 5675172 (1997-10-01), Miyamoto et al.
Silicon Processing for the VLSI Era, S. Wolf, 1990, pp. 301-305.
1993 Electronic Information Communication Society Autumn Convention, C-376 M. Nagaoka et al. (Partial Translation).
Power Heterojunction FETs for Low-Voltage Digital Cellular Applications IEICE Trans. Electron. vol. E78C, No. 9, pp. 1241-1245, Sep. 1995.
Hasegawa Takao
Matsumoto Nobuyuki
Ogawa Minoru
Shirakawa Kazuhiko
Eckert II George C.
Jackson, Jr. Jerome
Sharp Kabushiki Kaisha
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