Amplifier package using vertical power transistors with unground

Amplifiers – With semiconductor amplifying device – Integrated circuits

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Details

330277, 330286, 330301, H03F 304

Patent

active

049756591

ABSTRACT:
A power amplifier circuit utilizes vertical power transistors, such as static induction transistors, field effect transistors, or bipolar junction transistors, in a configuration where an ungrounded terminal serves as a common node while a separate reference terminal is connected directly to ground. A transformer of appropriate bandwidth couples an rf input signal to the input terminals of the transistor such that the input terminals are floating relative to ground. The novel amplifier circuit establishes separate electrical paths between the common terminal and the input circuit and between the common terminal and the output circuit. Thus, negative feedback is not present in the common lead, thereby improving gain, power output, and efficiency. Moreover, the circuit, in either a BJT, FET, or SIT configuration, can be fabricated on thinned semiconductor chips to form a transistor package in which the chips are bonded directly to the package heatsink.

REFERENCES:
patent: 2924778 (1960-02-01), Barton
patent: 3178648 (1965-04-01), Tanner
patent: 3381238 (1968-04-01), Barton et al.

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