Amplifiers – With semiconductor amplifying device – Including field effect transistor
Reexamination Certificate
2005-06-14
2005-06-14
Nguyen, Patricia (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including field effect transistor
C330S302000, C330S311000
Reexamination Certificate
active
06906591
ABSTRACT:
An amplifier includes a transistor, a current source, a MOS capacitor, and a level shifting module. The transistor includes a gate, a drain, and a source, wherein the source of the transistor is operably coupled to a voltage node. The current source is operably coupled to provide a current to the drain of the transistor. The Metal Oxide Semiconductor (MOS) capacitor includes a gate, a drain, a source, and a well, wherein the drain, the well, and the source of the MOS capacitor are coupled together to form a first plate of the MOS capacitor and the gate of the MOS capacitor provides a second plate of the MOS capacitor, wherein the second plate of the MOS capacitor is operably coupled to the gate of the transistor, wherein the drain of the transistor provides an output for the amplifier and the gate of the transistor provides an input of the amplifier. The level shifting module is operably coupled to the first plate of the MOS capacitor such that the level shifting module shifts a gate-source voltage of the MOS capacitor to reduce variances of capacitance of the MOS capacitor such that bandwidth of the amplifier is limited and the amplifier is stable.
REFERENCES:
patent: 5027082 (1991-06-01), Wisherd et al.
patent: 5477186 (1995-12-01), Kobatake
patent: 6100742 (2000-08-01), Erckert
patent: RE36932 (2000-10-01), Furutani
Garlick, Harrison & Marrison LLP
Markison Timothy W.
Nguyen Patricia
Sigmatel, Inc.
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