Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1994-12-21
1996-09-24
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330136, 330279, 330296, 455127, H03F 3193
Patent
active
055594719
ABSTRACT:
An amplifier contains an RF generated negative supply wherein the RF input of the negative generator is connected to the RF input of a first power amplifier stage. This arrangement allows the power supplies to be turned-on in the correct order, thus, avoiding any damage to the transistors or power supply. After the RF input turns on and the RF generated negative supply turns on, the power amplifier transistors are biased such that no current will flow from the drain to the grounded source. The power amplifier also features the ability to adjust the biasing voltage by increasing Vcontrol so that the bias current from the main supply can be controlled. Since the output power of the amplifier is monotonic with biasing current over the useful range of gate voltages, the output power can thereby be controlled by adjusting the control voltage. Additionally, the negative biasing voltage can be increased to the point where bias current from the main supply is at the correct level to achieve the desired output power. Depending on the required output power control range, it may be necessary to use a voltage controllable attenuator, VCA, to simultaneously adjust the RF level into the amplifier while adjusting the biasing voltage.
REFERENCES:
patent: 5363058 (1994-11-01), Sasaki
patent: 5432473 (1995-07-01), Mattila et al.
Dailey Kirk W.
Motorola Inc.
Mullins James B.
Vaas Randall S.
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