Amplified gate turn-off thyristor

Details Amplified gate turn-off thyristor Amplified gate turn-off thyristor

1983-08-26

1984-12-04

Clawson, Jr., Joseph E.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 20, 357 86, 307252A, 307252C, 307252K, 307305, H01K 2974

Patent

active

044867689

ABSTRACT:
A gate controlled semiconductor device is provided having a main electrode member consisting of a cathode electrode assembly formed in one end layer of a wafer of semiconductive material and an anode electrode assembly formed in other end layer of said wafer, a main thyristor portion, an auxiliary thyristor portion and a bias controlling member. Said main thyristor portion is constructed by at least one control electrode assembly which is provided in the vicinity of the cathode electrode assembly of the main electrode member. Said auxiliary thyristor portion includes an additional layer which is provided on the one layer of the wafer and being adjacent to the cathode electrode assembly and the auxiliary thyristor portion is forcedly switched on and off by said bias controlling member.

REFERENCES:
patent: 3544818 (1970-12-01), Harris
patent: 4092703 (1978-05-01), Sueoka et al.
patent: 4110638 (1978-08-01), Voss
patent: 4115707 (1978-09-01), Kalfus
patent: 4217504 (1980-08-01), Fullmann et al.
patent: 4255675 (1981-03-01), Lehmann et al.
patent: 4315274 (1982-02-01), Fukui et al.

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