Amplified gate semiconductor controlled rectifier with reduced l

Details Amplified gate semiconductor controlled rectifier with reduced l Amplified gate semiconductor controlled rectifier with reduced l

1978-03-01

1980-07-22

Clawson, Jr., Joseph E.

357 20, 357 64, 357 86, 357 91, H01L 2974

Patent

active

042142547

ABSTRACT:
A semiconductor controlled rectifier comprising an auxiliary thyristor region turned on by a gating signal and a main thyristor region turned on by being gated by the turn-on current flowing through the auxiliary thyristor region, wherein the life time of carriers in the auxiliary thyristor region is made shorter than that of the carriers in the main thyristor region.

REFERENCES:
patent: 3408545 (1968-10-01), De Cecco et al.
patent: 3526815 (1970-09-01), Svedberg et al.
patent: 4056408 (1977-11-01), Bartko et al.
patent: 4115798 (1978-09-01), Platzoeder

Affiliated with

Also associated with

Rating

Amplified gate semiconductor controlled rectifier with reduced l does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Amplified gate semiconductor controlled rectifier with reduced l, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Amplified gate semiconductor controlled rectifier with reduced l will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2180717