Amplification type solid-state imaging device having a center of

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

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2502141, 257232, 257291, 348294, H01J 4014, H04N 314

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active

058442340

ABSTRACT:
An amplification type solid-state imaging device according to the present invention includes: a first gate region functioning as a photoelectric conversion region, a second gate region, and a source region, the first gate region surrounding the source region, and the second gate region adjoining the first gate region on a side opposite the source region, to discharge signal charge accumulated in the first gate region through the second gate region. The center of the source region is displaced from the center of a pixel.

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patent: 5420634 (1995-05-01), Matsumoto
patent: 5430312 (1995-07-01), Yamada
patent: 5712497 (1998-01-01), Watanabe et al.
patent: 5726710 (1998-03-01), Hynecek
T. Nakamura et al., "Gate accumulation type MOS Phototransistors Image Sensors", 1986 Television Society National Meeting, published 1986, pp. 57-58 (with partial English translation).
K. Matsumoto et al., "The Operation Mechanism of a Charge Modulation Device (CMD) Image Sensor", IEEE Transactions on Electron Devices, vol. 38, No. 5, May 1991, pp. 989-998.

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