Amplification type solid-state image pickup having a three...

Details Amplification type solid-state image pickup having a three... Amplification type solid-state image pickup having a three...

2007-10-16

2007-10-16

Srivastava, Vivek (Department: 2622)

Television

Camera, system and detail

Solid-state image sensor

C348S301000, C250S208100

Reexamination Certificate

active

10353397

ABSTRACT:
An amplification type solid-state image pickup device has a plurality of pixels each of which comprises a photodiode4, a signal-amplification-use MOS transistor1for amplifying signal charges stored in the photodiode4, a reset-use MOS transistor2for resetting signal charges stored in the photodiode4, and a pixel-selection-use MOS transistor3for selecting a signal amplified by the signal-amplification-use MOS transistor1. During a first period, a reset drain voltage VP(i) is turned and held in a Low state. During second and third periods thereof, the reset drain voltage VP(i) is changed to a High state. A reset gate voltage RS(i) is set to a first voltage (VDD−ΔV) during the first and second periods, and the reset gate voltage RS(i) is set to a second voltage VDDhigher than the first voltage by a specified voltage ΔV during the third period.

REFERENCES:
patent: 6760070 (2004-07-01), Merrill et al.
patent: 6864920 (2005-03-01), Kindt et al.
patent: 2002/0003581 (2002-01-01), Sato et al.
Mabuchi et al., “A ¼ Inch 330K Pixel VGA CMOS Image Sensor”, Technical Report of the Institute of Image Information and Television Engineers, vol. 21, No. 21, pp. 25-30, IPU'97-13, Mar. 1997.
Bedabrata Pain et al., “Analysis and enhancement of low-light-level performance of photodiode-type CMOS active pixel imagers operated with sub-threshold reset”, IEEE Workshop on CCDs and Advance Image Sensors 1999, pp. 140-143.

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