Amplification type solid-state image pickup device

Details Amplification type solid-state image pickup device Amplification type solid-state image pickup device

2005-07-28

2010-11-23

Ometz, David L (Department: 2622)

Television

Camera, system and detail

Solid-state image sensor

C348S301000, C250S208100

Reexamination Certificate

active

07839441

ABSTRACT:
An control unit of the amplification type solid-state image pickup device, during a first period T2, controls the gate voltage of the transfer transistor to a first gate voltage V1to make electrons as signal charge transferred from the phototransistor to the charge detection part. Also, the control unit, in a second period T3subsequent to the first period T2, sets the gate of the transfer transistor to a high impedance and moreover, in a period TPUwithin the second period T3, controls the gate voltage of the transfer transistor to a second gate voltage V2which allows power of transferring the signal charge to the charge detection part to be enhanced than the first gate voltage V1.

REFERENCES:
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patent: 2002/0054390 (2002-05-01), Koizumi et al.
patent: 2006/0023097 (2006-02-01), Watanabe
patent: 9-46596 (1997-02-01), None
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K. Inoue, et al., “New LV-BPD(Low Voltage Buried Photo-Diode)for CMOS Imager,” International Electron Device Meeting (IEDM) Technical Digest, pp. 883-836, (1999).

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