Amplification circuit

Details Amplification circuit Amplification circuit

1998-10-16

2000-10-03

Pascal, Robert

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330307, H03F 316, H03F 314

Patent

active

061278920

ABSTRACT:
An object is to obtain an amplification circuit which provides a high gain even with a low-voltage power supply. The amplification circuit comprises an MOS transistor (M1) having a gate receiving an amplified signal (RFin), a source electrically connected to ground, and a drain electrically connected to a supply voltage (VDD), wherein the back gate-source voltage (Vbs) of the MOS transistor (M1) is made larger as the gate-source voltage (Vgs) of the MOS transistor (M1) becomes larger, thereby making the threshold voltage (VT) of the MOS transistor (M1) smaller.

REFERENCES:
patent: 3405330 (1968-10-01), Hilbiber
patent: 5559892 (1996-09-01), Boor
Takakuni Douseki, et al., "A 0.5V SIMOX-MTCMOS Circuit With 200ps Logic Gate", IEEE International Solid-State Circuits Conference, Digest of Technical Papers, Feb. 1996, pp. 84-85.
Tsuneaki Fuse, et al., "0.5V SOI CMOS Pass-Gate Logic", IEEE International Solid-State Circuits Conference, Digest of Technical Papers, Feb. 1996, pp. 88-89.
Grebene, Alan B.: Bipolar and MOS analog integrated circuit design, New York [et al.]: John Wiley & Sons, 1984, pp. 268-271.

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