Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1996-11-06
1998-07-14
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257231, 257249, H01L 2978
Patent
active
057808848
ABSTRACT:
The amplification type solid-state imaging device of this invention includes amplification type photoelectric converting elements arranged in a matrix. Each of the amplification type photoelectric converting elements includes: a transistor formed at a surface of a semiconductor substrate, for accumulating signal charge generated from incident light on a portion of the transistor at the surface of the semiconductor substrate and outputting an output signal comprising a change in an electric signal corresponding to the accumulated signal charge; a gate region formed adjacent to the transistor, including a portion of the semiconductor substrate, an insulating film formed on the portion of the semiconductor substrate, and a gate electrode formed on the insulating film, the gate region allowing the accumulated signal charge to move from the surface of the semiconductor substrate to the inside of the semiconductor substrate; and an output impedance converting section connected to the photoelectric converting elements which sequentially receives the output signals from the amplification type photoelectric converting elements, the output impedance converting section including a driving transistor driven with the output signals and a load transistor.
REFERENCES:
patent: 4498013 (1985-02-01), Kuroda et al.
patent: 5235197 (1993-08-01), Chamberlain et al.
patent: 5306932 (1994-04-01), Miwada
IBM Technical Disclosure Bulletin, "Preventing Overload In Optical Scanners", Gaffney et al., vol. 17, No. 8, May 1975, pp. 3529-3530.
K. Matsumoto, et al., IEEE Transactions On Electron Devices, "The Operation Mechanism of a Charge Modulation Device (CMD) Image Sensor", vol. 38, No. 5, pp. 989-998, 1991.
J. Hynecek, et al., IEEE Transactions on Electron Devices, "A New Device Archtecture Suitable for High-Resolution and High-Performance Image Sensors", vol. 35, No. 5, pp. 646-652, 1988.
J. Hynecek, et al., IEEE Transactions On Electron Devices, "BCMD-An Improved Photosite Structure for High-Density Image Sensors", vol. 38, No. 5, pp. 1101-1020, 1991.
E.R. Fossum, IEDM 95, "CMOS Image Sensors: Electronic Camera On a Chip", pp. 17-25, 1995.
T. Watanabe, U.S. Patent Application No.: 08/382,257, filed Feb. 1, 1995.
Kudo Hiroaki
Kumagai Kazuya
Conlin David G.
Hardy David B.
Michaelis Brian L.
Sharp Kabushiki Kaisha
Thomas Tom
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