Amphoteric heterojunction

Details Amphoteric heterojunction Amphoteric heterojunction

1975-12-11

1977-07-12

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 33, 148 335, 148172, 357 16, 357 38, 252 623GA, H01L 21208

Patent

active

040352056

ABSTRACT:
A method of manufacturing a hetero junction by epitaxial deposition in a solution.
The solution contains an amphoteric dopant and the composition thereof is modified at a temperature which lies between the transition temperatures prior to and after the modification.
Application to electroluminescent devices of III and V type.

REFERENCES:
patent: 3560275 (1971-02-01), Kressel et al.
patent: 3677836 (1972-07-01), Lorenz
patent: 3752713 (1973-08-01), Sakuta et al.
patent: 3783825 (1974-01-01), Kobayashi et al.
patent: 3854447 (1974-12-01), Kobayashi
patent: 3862859 (1975-01-01), Ettenberg et al.
IBM Technical Bulletin, Blum et al., "Integrated Al.sub.x Ga.sub.1.sub.-x As Light-Emitting PNPN Memory Cell," vol. 15, No. 2, (July 1972), p. 470.

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